Photoelastic stress evaluation and defect monitoring in 300-mm-wafer manufacturing

Materials Science in Semiconductor Processing

Volumn 5, Issue 4-5 SPEC., 2002, Pages 445-455

  Geiler, H D ^a   Wagner, M ^a   Karge, H ^a   Paulsen, M ^b   Schmolke, R ^b  

^a JenaWave Engineering and Consulting   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

300 mm wafers; Defect monitoring; Photoelasticity; Semiconductors; Stress

Indexed keywords

ABRASION; CRYSTAL DEFECTS; ETCHING; GRINDING (MACHINING); HEAT TREATMENT; INFRARED RADIATION; INTEGRATED CIRCUIT MANUFACTURE; LAPPING; NONDESTRUCTIVE EXAMINATION; PHOTOELASTICITY; POLARIZATION; POLISHING; PROCESS CONTROL; STRESS ANALYSIS;

SCANNING INFRARED DEPOLARIZATIONS;

WSI CIRCUITS;

EID: 0036960009     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00138-5     Document Type: Conference Paper

References (19)

1. Koyama H. Evaluation technologies for ULSI. In: Kolbesen BO, Claeys C, Stallhofer P, Tardif F, Benton J, Shaffner T, Schroder D, Kishino S, Rai-Choudhury P, editors. Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes. Proceedings of the Joint Symposium on 196th Meeting ECS and ALTECH 99, ECS Vol. PV99-16. Pennington: Electrochemical Society, 1999. p. 289.
2. Deters R, Dietrich H, Kupfer C. Balancing metrology efforts and quality requirements to achieve cost optimization. In: Baylies W, editor. Semi Workshop on Metrology for Silicon Wafers for 100 nm Technology Generation and Beyond, Semicon Europe 2002, Munich, April 18, 2002. SEMI.
3. Ehlert A., Kerstan M., Lundt H., Huber A., Helmreich D., Geiler H.D., Karge H., Wagner M. SPIE Opt Eng. 36:1997;446.
4. Hornstra J., Penning P. Philips Res Rep. 14:1959;237.
5. Bauer K.H., Feuerstake J., Fröhlich F., Mohr U. Kristall Tech. 8:1973;253.
6. Geil W., Markus M., Schmugge K., Thomas R. Kristall Tech. 11:1976;1265.
7. Geiler H.D., Kürner W., Storbeck O. Mater Res Soc Symp Proc. 591:2000;249.
8. Wagner M, Geiler HD, Heitzig J, Mugele A. Fast and non-destructive detection of crystal defects in wafers by imaging of local stress. Proceedings of the SEMI Technology Symposium (STS), Session 7: Monitoring and Control Technology, Makuhari, 1999. p. 7-65.
9. Lundt H., Kerstan M., Weiss R. Subsuface damage characterization of silicon using scaninng infrared depolarization. Estler W.T. Proceedings of the Spring Topical Meeting of the American Society for Precision Engineering (ASPE), Silicon Machining, Tucson. 1993;42-45 ASPE, Raleigh.
10. Dally JW, Riley WF. Experimental stress analysis. New York: McGraw-Hill, 1991. p. 424ff.
11. Lederhandler S.R. J Appl Phys. 10:1959;1631.
12. Liang H., Pan Y., Zhao Sh., Qin G., Chin K.K. J Appl Phys. 71:1992;2863.
13. Aben H, Guillemet C. Photoelasticity of glass. Berlin: Springer, 1993. p. 57.
14. Geiler H., Karge H., Wagner M., Ehlert A., Daub E., Messmann K. Mater Sci Eng B. 91-92:2002;46.
15. Müller T, Siebert W, Messmann K, Wahlich R, Krottenthaler P, Hölzl P, Ikari A, Ammon WV. Proceedings of the ECS 201th Meeting, Philadelphia, Symposium Silicon Materials, Science and Technology (N1), ECS PV-2002-2, p. 194.
16. Niess J, Dietl W, Altug O, Lerch W, Geiler HD, Karge H. In: Roozeboom F, Kwong DL, Reid K, Ozturk M, Timans PI, editors. Rapid thermal and other short-time processing technologies II. Proceedings of the 199th Meeting ECS, Vol P-2001-9. Pennington: ECS. p. 79.
17. Geiler HD, Karge H, Krimbacher B. In: Roozeboom F, Öztürk MC, Gelpey JP, Reid KG, Kwong D-L, editors. Rapid thermal and other short-time processing technologies. Proceedings of the 197th Meeting ECS. vol. P-2000-9, Pennington: ECS, 2000. p. 347.
18. Fischer A., Richter H., Kürner W., Kücher P. J Appl Phys. 87:2000;1543.
19. O'Mara WC, Herring RB, Hunt LP, editors. Handbook of semiconductor technology. Park Ridge: Noyes Pub., 1990. p. 347ff.