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Volumn 17, Issue 2, 2004, Pages 111-122

Development of a large-scale TEG for evaluation and analysis of yield and variation

Author keywords

Address decoder; Charge up; Correlation analysis; Damage; Electrical dimension; Large scale; Pattern density; Periodicity; TEG; Test structure; Variation; Wafer map; Yield

Indexed keywords

LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; ROM; SILICON WAFERS; STATIC RANDOM ACCESS STORAGE; TRANSISTORS;

EID: 2642521989     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2004.826937     Document Type: Conference Paper
Times cited : (30)

References (14)
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  • 3
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    • Shimizu, Y.1    Nakamura, M.2    Matsuoka, T.3    Taniguchi, K.4
  • 4
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    • Logic characterization vehicle to determine process variation impact on yield and performance of digital circuits
    • C. Hess, B. E. Stine, L. H. Weiland, and K. Sawada, "Logic characterization vehicle to determine process variation impact on yield and performance of digital circuits," in Proc. ICMTS, 2002, pp. 189-196.
    • (2002) Proc. ICMTS , pp. 189-196
    • Hess, C.1    Stine, B.E.2    Weiland, L.H.3    Sawada, K.4
  • 5
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    • Yield management methodology for SoC vertical yield ramp
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    • Miyamoto, K.1
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    • Evaluation of the issues involved with test structures for the measurement of sheet resistance and linewidth of copper damascene interconnect
    • S. Smith, A. J. Walton, A. W. S. Ross, G. K. H. Bodammer, and J. T. M. Stevenson, "Evaluation of the issues involved with test structures for the measurement of sheet resistance and linewidth of Copper Damascene interconnect," in Proc. ICMTS, 2001, pp. 195-200.
    • (2001) Proc. ICMTS , pp. 195-200
    • Smith, S.1    Walton, A.J.2    Ross, A.W.S.3    Bodammer, G.K.H.4    Stevenson, J.T.M.5
  • 9
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    • Gate current: Modeling, δL extraction
    • R. V. Langevelde, "Gate current: Modeling, δL extraction," in IEDM, 2001, pp. 13.2.1-13.2.4.
    • (2001) IEDM
    • Langevelde, R.V.1
  • 10
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    • An integrated test chip for the complete characterization and monitoring of a 0.25 μm CMOS technology that fits into five scribe line structures 150 μm by 5 000 μm
    • R. Lefferts and C. Jakubiec, "An integrated test chip for the complete characterization and monitoring of a 0.25 μm CMOS technology that fits into five scribe line structures 150 μm by 5 000 μm," in Proc. ICMTS, 2003, pp. 59-63.
    • (2003) Proc. ICMTS , pp. 59-63
    • Lefferts, R.1    Jakubiec, C.2
  • 11
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    • Study on STI mechanical stress induced variations on advanced CMOSFETs
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    • (2003) Proc. ICMTS , pp. 205-208
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  • 12
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    • Measuring the effects of process variations on circuit performance by means of digitally-controllable ring oscillators
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.