Large-signal HBT model with improved collector transit time formulation for GaAs and InP technologies

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 635-638

  Iwamoto, Masaya ^a   Root, David E ^b   Scott, Jonathan B ^b   Cognata, Alex ^b   Asbeck, Peter M ^a   Hughes, Brian ^b   D'Avanzo, Don C ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DELAY FUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0042594502     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. L.H. Camnitz et al., "An accurate, large signal, high frequency model for GaAs HBT's," GaAs IC Tech. Digest, pp303-306, 1996.
2. UCSD HBT Model, http://hbt.ucsd.edu
3. M. Rudolph et al., "Unified model for collector charge in HBTs," Trans. MTT, vol. 50, pp1747-1751, July 2002.
4. M. Iwamoto et al., "Linearity characteristics of GaAs HBT's and the influence of collector design," Trans. MTT, vol. 48, pp. 2377-2388, Dec. 2000.
5. M. Schröter and T.-Y. Lee, "Physics-based minority charge and transit time modeling for bipolar transistors", Trans. Electron Devices, vol. 46, pp288-300, Feb. 1999.
6. L.H. Camnitz and N. Moll. "An Analysis of the Cutoff-Frequency Behavior of Microwave Heterostructure Bipolar Transistors," in Compound Semiconductor Transistors, Physics and Technology, IEEE Press, pp.21-46, 1993.
7. D.E.Root et. al, "Technology independent large signal non quasistatic FET models by direct construction from automatically characterized device data," European Microwave Conference, 1991.
8. M. Rudolph et al., "On the Implementation of Transit-Time Effects in Compact HBT Large-Signal Models," Trans. MTT, vol. 50, Dec. 2002.