Facility for simultaneous dual-beam ion implantation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 551, Issue 2-3, 2005, Pages 200-207

  Kaschny, J R ^a   Kogler R ^b   Tyrrof, H ^b   Burger W ^b   Eichhorn, F ^b   Mucklich A ^b   Serre, C ^c   Skorupa, W ^b  

^a DEPARTAMENTO DE CIÊNCIAS BIOLÓGICAS   (Brazil)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c UNIVERSITY OF BARCELONA   (Spain)

Author keywords

Ion beam synthesis; Ion implantation; Radiation effects; Si; SiC; Simultaneous implantation

Indexed keywords

ELECTRIC CURRENT CONTROL; ION BEAMS; NANOSTRUCTURED MATERIALS; NUCLEAR INSTRUMENTATION; RADIATION EFFECTS; SILICON CARBIDE;

ION BEAM SYNTHESIS; SIC; SIMULTANEOUS IMPLANTATION;

ION IMPLANTATION;

EID: 25844526470     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.06.046     Document Type: Article

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