Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 170-175

  Posselt, M ^a   Teichert, J ^a   Bischoff, L ^a   Hausmann, S ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Channeling; Computer simulation; Defects; Focused ion beam; Ion implantation

Indexed keywords

COMPUTER SIMULATION; FOCUSING; ION BEAMS; ION IMPLANTATION; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MODELS;

CHANNELING IMPLANTATIONS; FOCUSED ION BEAM (FIB) SYSTEMS;

SEMICONDUCTING SILICON;

EID: 0035337274     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00505-X     Document Type: Conference Paper

References (7)