Structural properties of InAs nanocrystals formed by sequential implantation of in and As ions in the Si (100) matrix

Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4664-4671

  Tchebotareva, A ^a   Brebner, J L ^a   Roorda, S ^a   Desjardins, P ^a   White, C W ^b  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION PROFILES; DIFFERENT SIZES; EPITAXIAL RELATIONSHIPS; INAS; INAS NANOCRYSTALS; ION SPECIES; SEQUENTIAL IMPLANTATIONS; SEQUENTIAL ION IMPLANTATION; SI(1 0 0); SIGNIFICANT IMPACTS; THERMAL-ANNEALING; THREE-LAYER STRUCTURES; TRANSMISSION ELECTRON;

INDIUM ARSENIDE; ION IMPLANTATION; IONS; OPTICAL PROPERTIES; SILICON; SIZE DISTRIBUTION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

NANOCRYSTALS;

EID: 18744384316     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1507822     Document Type: Article

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