Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 812-815

  Wells, A ^b   Uren, M J ^a   Balmer, R S ^a   Nash, K J ^a   Martin, T ^a   Missous, M ^b  

^a QINETIQ   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PHONON SCATTERING; ALLOY SCATTERING; COULOMB SCATTERING; ROOM TEMPERATURE;

EXTRACTION; GALLIUM NITRIDE; SCATTERING; SURFACE ROUGHNESS; THERMAL EFFECTS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 25444520503     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461352     Document Type: Conference Paper

References (14)

1. P. Chavarkar, I. P. Smorchkova, S. Keller, U. K. Mishra, W. Walukiewicz, and Y. Wu, Group-III nitride based high mobility transistor (HEMT) with barrier/spacer layer, US Patent Application Publication, Pub. US2002/0167023 A1, 14th November 2002.
2. I. P. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran et al., J. Appl. Phys. 90, 5196-5201 (2001).
3. L. Hsu and W. Walukiewicz, J. Appl. Phys. 89, 1783 (2001).
4. R. S. Balmer, K. P. Hilton, K. J. Nash, M. J. Uren, D. J. Wallis, D. Lee et al., Semicond. Sci. Technol. 19, L65-67 (2004).
5. T. Li, R. P. Joshi, and R. D. d. Rosario, IEEE Trans. Electron Devices 49, 1511 (2002).
6. O. Katz, A. Horn, G. Bahir, and J. Salzman, IEEE Trans. Electron Devices 50, 2002 (2003).
7. J. L. Farvacque and Z. Bougrioua, Phys. Rev. B 68, 035335 (2003).
8. X. Z. Dang, P. M. Asbeck, E. T. Yu, G. J. Sullivan, M. Y. Chen, B. T. McDermott et al., Appl. Phys. Lett. 74, 3890-3892 (1999).
9. M. Shur, B. Gelmont, and M. A. Khan, J. Electron. Mater. 25, 777 (1996).
10. M. J. Uren, T. Martin, B. T. Hughes, K. P. Hilton, A. Wells, R. S. Balmer et al., phys. stat. sol. (a) 194, 468 (2002).
11. K. Hirakawa and H. Sakaki, Phys. Rev. B 33, 8291 (1986).
12. D. C. Look, Electrical characterization of GaAs materials and devices (John Wiley and Sons, 1989).
13. B. Vinter, Appl. Phys. Lett. 45, 581 (1984).
14. W. Knap, E. Borovitskaya, M. S. Shur, L. Hsu, W. Walukiewicz, E. Frayssinet et al., Appl. Phys. Lett. 80, 1228 (2002).