Field-plated 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18 GHz

Electronics Letters

Volumn 41, Issue 19, 2005, Pages 1080-1081

  Kumar, V ^a   Chen, G ^a   Guo, S ^b   Peres, B ^b   Eliasevich, I ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CIRCUIT OSCILLATIONS; CURRENT DENSITY; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NATURAL FREQUENCIES; SILICON CARBIDE; TRANSCONDUCTANCE;

EXTRINSIC TRANSCONDUCTANCE; GAIN CUTOFF FREQUENCY; POWER DENSITY; POWER-ADDED-EFFICIENCY (PAE);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 25444512409     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20052051     Document Type: Article

References (10)

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