Impact of the self-generated heat on the scalability of HEMTs

Microelectronic Engineering

Volumn 82, Issue 2, 2005, Pages 143-147

  Caddemi, A ^a   Crupi, G ^a   Donato, N ^a  

^a UNIVERSITY OF MESSINA   (Italy)

Author keywords

Gate width; HEMT; Self heating effect; Transconductance

Indexed keywords

ENERGY DISSIPATION; GATES (TRANSISTOR); MICROWAVE DEVICES; MICROWAVES; SIGNAL PROCESSING; THERMAL EFFECTS; TRANSCONDUCTANCE;

GATE WIDTH; HEAT GENERATION; SCALABILITY; SELF-HEATING EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 25444508286     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.003     Document Type: Article

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