A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameters measurements

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 580-584

  Siriex, Delphine ^a   Noblanc, Olivier ^a   Barataud, Denis ^a   Chartier, Eric ^b   Brylinski, Christian ^b   Quéré, Raymond ^c  

^a IEEE   (France)

^b CNRS   (France)

^c THALES   (France)

Author keywords

Mesfet's; Nonlinear modeling; Pulsed measurements; SiC; Splines

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; NONLINEAR NETWORKS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; VOLTAGE MEASUREMENT;

HARMONIC BALANCE SIMULATORS;

MESFET DEVICES;

EID: 0033099467     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748881     Document Type: Article

References (5)

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3. J.P. Teyssier, M. Campovecchio, C. Sommet, J. Portilla, and R. Quéré, "A pulsed 5-parameters measurement setup for the non linear characterization of FET' s and bipolar power transistor," in Proc. 23rd EuMC'93, Madrid, Spain, Sept. 1993, pp. 489-493.
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