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Volumn 1, Issue , 1999, Pages 52-55
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Scaleable small-signal MESFET/PHEMT models up to 30 mm periphery
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Author keywords
[No Author keywords available]
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Indexed keywords
EQUIVALENT CIRCUITS;
HIGH ELECTRON MOBILITY TRANSISTORS;
MESFET DEVICES;
SEMICONDUCTOR DEVICE MODELS;
PSEUDOMORPHIC HIGH-ELECTRON MOBILITY TRANSISTORS (PHEMT);
FIELD EFFECT TRANSISTORS;
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EID: 0033318330
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (6)
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References (4)
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