Discrepancies obtained in transconductance extracted from pulsed I-V curves and from pulsed S-parameters in HEMTs and PHEMTs

Electronics Letters

Volumn 34, Issue 3, 1998, Pages 291-292

  Collantes, J M ^a   Ouarch, Z ^b   Chi, C Y ^c   Sayed, M ^c   Quere, R ^b  

^a UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^b UNIVERSITY OF LIMOGES   (France)

^c HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; THERMAL EFFECTS; TRANSCONDUCTANCE;

PULSED CHARACTERIZATION; S PARAMETER MEASUREMENT; TRANSCONDUCTANCE EXTRACTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032484782     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980197     Document Type: Article

References (6)

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2. LADBROOKE, , and BLIGHT, S.R.: 'Low-field, low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate-dependent anomalies', IEEE Trans. Electron Devices, 1988, 35, pp. 257-267
3. TEYSSIER, J.P., VIAUD, J.P., RAOUX, J.J., and QUERE, R.: 'Fully integrated non-linear modeling and characterization system of microwave transistors with on-wafer pulsed measurements'. IEEE MTTs Digest, Orlando, 1995, pp. 1033-1036
4. COLLANTES, J.M., BARATAUD, D., RAOUX, J.J., and QUERE, R.: 'Complete non-linear MOSFET model for radiomobile applications'. INMMC'96, Duisburg, Germany, October 1996, pp. 102-107
5. SCOTT, J., PARKER, A., RATHMELL, J., and SAYED, M.: 'New applications for pulsed/isothermal test systems'. ARFTG, San Francisco, CA, June 1996, pp. 70-75
6. ANHOLT, R.: 'Electrical and thermal characterization of MESFETs, HEMTs and HBTs' (Artech House 1995), pp. 166-169