Mechanism of power density degradation due to trapping effects in AlGaN/GaN HEMTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages 455-458

  De Meyer, S ^a   Charbonniaud, C ^a   Quere R ^a   Campovecchio, M ^a   Lossy, R ^b   Wurfl J ^b  

^a UNIVERSITY OF LIMOGES   (France)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN;

POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0042665453     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S.T. Sheppard et al., "High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates," IEEE Electron Devices Letters, vol. 20, pp161-163, 1999.
2. S. C. Binari et al, "Trapping effects in GaN and SiC microwave FETs," Proceedings of the IEEE, vol. 90, no. 6, pp. 1048-1058, June 2002.
3. C. Nguyen et al, "Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies," Electronics Lett., vol. 35, no. 16, Aug 1999.
4. J.-P. Teyssier et al, "40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization," IEEE Transactions on Microwave Theory and Techniques, vol. 46, no. 12, pp. 2043-2052, December 1998.
5. D. Siriex et al, "Characterization and modeling of nonlinear trapping effects in power SiC MESFETs," Microwave Symposium Digest, 2000 IEEE MTT-S International, vol. 2, pp. 765-768, 2002.