Characterization of p-dopant interdiffusion in 1.3 μm InGaAsP/InP laser structures using modulation spectroscopy

Journal of Applied Physics

Volumn 86, Issue 4, 1999, Pages 2020-2024

  Jaeger, A ^a,c   Sun, W D ^a   Pollak, Fred H ^a   Reynolds Jr , C L ^b   Geva, M ^b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005143711     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371150     Document Type: Article

References (9)

1. See for example, G. L. Belenky, D. V. Donetsky, C. L. Reynolds, Jr., R. F. Kazarinov, G. E. Shtengel, S. Luryi, and J. Lopata, IEEE Photonics Technol. Lett. 9, 1558 (1997).
2. See, for example, G. L. Belenky, C. L. Reynolds, Jr., R. F. Kazarinov, V. Swaminathan, S. Luryi, and J. Lopata, IEEE J. Quantum Electron. 32, 1450 (1996).
3. See, for example, F. H. Pollak and H. Shen, Mater. Sci. Eng., R. 10, 275 (1993).
4. S. Adachi, Physical Properties of III-V Semiconductor Compounds:InP, InAs, GaAs, GaP, InGaAs, and InGaAsP (Wiley, New York, 1992).
5. A. Jaeger et al., J. Appl. Phys. 85, 1921 (1999).
6. G. Bastard and J. A. Brum, IEEE J. Quantum Electron. QE-22, 1625 (1986).
7. F. H. Pollak, W. Krystek, M. Leibovitch, L. Malikova, M. S. Hybertsen, R. Lum, J. M. Vandenberg, and C. L. Reynolds, Proc. SPIE 2693, 455 (1996); M. S. Hybertsen, G. A. Baraff, D. A. Ackerman, G. E. Shtengel, M. Leibovitch, and F. H. Pollak, ibid. 2693, 430 (1996).
8. F. H. Pollak, W. Krystek, M. Leibovitch, L. Malikova, M. S. Hybertsen, R. Lum, J. M. Vandenberg, and C. L. Reynolds, Proc. SPIE 2693, 455 (1996); M. S. Hybertsen, G. A. Baraff, D. A. Ackerman, G. E. Shtengel, M. Leibovitch, and F. H. Pollak, ibid. 2693, 430 (1996).
9. C. F. Li, D. Y. Lin, Y. S. Huang, Y. F. Chen, and K. K. Tiong, J. Appl. Phys. 81, 400 (1997).