Investigation of dielectric cap induced intermixing of In xGa1-xAsyP1-y/InP quantum well laser structures by photoreflectance and photoluminescence

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 137-141

  Kudrawiec, R ^a   Sek G ^a   Rudno Rudzinski W ^a   Misiewicz, J ^a   Wojcik, J ^b   Robinson, B J ^b   Thompson, D A ^b   Mascher, P ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

InGaAsP compound; Photoreflectance spectroscopy

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; GROUND STATE; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; STOICHIOMETRY;

INGAASP COMPOUND; PHOTOREFLECTANCE SPECTROSCOPY;

QUANTUM WELL LASERS;

EID: 1642340396     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00683-9     Document Type: Conference Paper

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