Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography

Applied Physics Letters

Volumn 82, Issue 8, 2003, Pages 1191-1193

  Offermans, P ^a   Koenraad, P M ^a   Wolter, J H ^a   Song, J D ^b   Kim, Jong Min ^c   Bae, Seong Ju ^c   Lee, Yong Tak ^c  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b Korea Institute of Science and Technology   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); PHASE SEPARATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SURFACE ROUGHNESS;

DIGITAL ALLOYS;

INDIUM ALLOYS;

EID: 0037463330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555265     Document Type: Article

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