Photoreflectance study of the interdiffusion effects in the InGaAsP-based quantum well laser structures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 602-603

  Kudrawiec, R ^a   Sek, G ^a   Ryczko, K ^a   Rudno Rudzinski W ^a   Misiewicz, J ^a   Wojcik, J ^b   Robinson, B J ^b   Thompson, D A ^b   Mascher, P ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

Interdiffusion; Photoreflectance; Quantum wells

Indexed keywords

ANNEALING; DIELECTRIC PROPERTIES; ELECTRON TRANSITIONS; GROUND STATE; INTERDIFFUSION (SOLIDS); SEMICONDUCTOR GROWTH;

QUANTUM WELL LASER STRUCTURE;

QUANTUM WELL LASERS;

EID: 0037393174     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00882-2     Document Type: Conference Paper

References (3)

1. Boudreau M.et al. Appl. Phys. Lett. 63:1993;3014.
2. Kudrawiec R.et al. Acta Phys. Pol. A. 102:2002;649.
3. Hazell J.F.et al. Semicond. Sci. Technol. 16:2001;986.