Effects of rapid thermal annealing on the optical properties of In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells with InGaAs and dielectric capping layers

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2080-2084

  Yu, Jae Su ^a   Song, Jin Dong ^a   Lee, Yong Tak ^a   Lim, H ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANION VACANCY; BARRIER LAYERS; BLUE SHIFT; CAP LAYERS; CAPPING LAYER; COMPOSITION MODULATIONS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DIELECTRIC CAPPING LAYERS; DIELECTRIC LAYER; GROWTH DIRECTIONS; INALAS; INGAAS/INALAS; NONRADIATIVE RECOMBINATION CENTERS; PEAK ENERGY; PL INTENSITY; PL SPECTRA; RED SHIFT;

OPTICAL PROPERTIES; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33845382773     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1427436     Document Type: Article

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