Epitaxial growth of 4H-SiC with hexamethyldisilane HMDS

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 263-266

  Sartel, C ^a   Souliere, V ^a   Dazord, J ^a   Monteil, Y ^a   El Harrouni, I ^b   Bluet, J M ^b   Guillot, G ^b  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

4H SiC; Alkylsilane; CVD; Hexamethyldisilane; HMDS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GROWTH RATE; PROPANE; SILANES; SILICON CARBIDE; EPITAXIAL GROWTH; HELMET MOUNTED DISPLAYS;

ALKYLSILANE; HEXAMETHYLDISILANE; 4H-SIC; ALKYLSILANES; GROWTH EFFICIENCY; HEXAMETHYLDISILANES; HOMO EPITAXIES;

EPITAXIAL GROWTH; SILICON CARBIDE;

EID: 4243241211     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.263     Document Type: Article

References (10)

1. C.W. Liu and J.C. Sturm: J. Appl. Phys. Vol. 82 (1997) p. 4558.
2. Y.H. Seo, K.C. Kim, H.W. Shim, K.S. Nahm, E.K. Suh, H.J. Lee, D.K. Kim and B.T. Lee: J. Electrochem. Soc. Vol. 145 (1998) p. 292.
3. J. Hoffmann and S. Veprek: Thin Solid Films Vol. 318 (1998) p. 18.
4. K. Takahashi, S. Nishino and J. Saraie: J. Electrochem. Soc. Vol. 139 (1992) p. 3565.
5. Y. Chen, K. Matsumoto, Y. Nishio, T. Shirafuji and S. Nishino: Mat. Sci. Eng. Vol. B61-62 (1999) p. 579.
6. P. Aboughé-Nzé: Thesis Université Lyon 1, January 2001.
7. G. Ferro, P. Aboughé-Nzé, N. Planes, J. Camassel, Y. Stoemenos, J. Dazord, F. Cauwet, G. Younes, Y. Monteil and L. Smith: to be submitted.
8. N. Nordell, S. Nishino, J.W.Yang, C.Jacob and P.Pirouz: J. Electrochem. Soc. Vol.142(2) (1995) p.565.
9. C.C. Tin, R. Hu, J. Liu, Y. Vohra and Z.C. Feng: J. Cryst. Growth Vol. 158 (1996) p. 509.
10. S. Nakashima and H. Harima: Phys. Stat. Sol. (a) Vol. 162 (1997) p. 39.