Morphological and structural characteristics of homoepitaxial 4H-SiC thin films by chemical vapor deposition using bis-trimethylsilylmethane precursor

Thin Solid Films

Volumn 377-378, Issue , 2000, Pages 567-572

  Jeong, Jae Kyeong ^a   Na, Hoon Joo ^a   Kim, Bum Seok ^a   Um, Myung Yoon ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; THIN FILMS; X RAY CRYSTALLOGRAPHY;

HOMOEPITAXIAL THIN FILMS;

SEMICONDUCTING FILMS;

EID: 0034502869     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01293-1     Document Type: Article

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