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Volumn 40, Issue 1, 2001, Pages 34-39
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Valence subband structures and optical properties of strain-compensated quantum wells
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Author keywords
AlGaInAs; Band mixing; Optical gain; Quantum well; Strain compensation; Transition strength; Valence subband
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Indexed keywords
BAND STRUCTURE;
OPTICAL PROPERTIES;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
STRAIN;
TENSILE STRESS;
STRAIN COMPENSATION EFFECTS;
VALENCE BAND MIXING;
VALENCE SUBBAND STRUCTURES;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 0035064233
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.40.34 Document Type: Article |
Times cited : (6)
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References (24)
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