Recombination dynamics of traps in SiO2 layer on Si by scanning capacitancemicroscopy

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Kang, C J ^a   Kim, C K ^a   Kuk, Y ^a   Williams, C C ^b  

^a Seoul National University   (South Korea)

^b UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; DC BIAS; DC BIAS VOLTAGE; DEVICE STRUCTURES; RECOMBINATION DYNAMICS; SCANNING CAPACITANCE MICROSCOPY; SILICON SAMPLES; THREE DIMENSIONAL SIMULATIONS; TRAPPED CHARGE;

ARSENIC; CAPACITANCE; SILICON COMPOUNDS; SILICON OXIDES; THREE DIMENSIONAL COMPUTER GRAPHICS;

THREE DIMENSIONAL;

EID: 25344470532     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051174     Document Type: Article

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