Cross-sectional scanning tunneling spectroscopy of cleaved, silicon-based metal-oxide-semiconductor junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 1607-1610

  Thibado, Paul M ^a,c   Mercer, T W ^a,c   Fu, Shelton ^b   Egami, Takeshi ^b   DiNardo, N J ^a   Bonnell, Dawn A ^b  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

BAND BENDING; ENERGY BANDS; GATE BIAS; TRANSFER HAMILTONIAN TUNNELING MODEL;

MOS DEVICES;

EID: 0030142010     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589199     Document Type: Article

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