Composition control and ferroelectric properties of sidewalls in integrated three-dimensional SrBi 2Ta 2O 9 -based ferroelectric capacitors

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Goux, L ^a   Lisoni, J G ^a   Schwitters, M ^a   Paraschiv, V ^a   Maes, D ^a   Haspeslagh, L ^a   Wouters, D J ^a   Menou, N ^b   Turquat, Ch ^b   Madigou, V ^b   Muller, Ch ^b   Zambrano, R ^c  

^a IMEC   (Belgium)

^b UNIVERSITÉ DE TOULON   (France)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION CONTROL; ELECTRICAL BEHAVIORS; FERROELECTRIC CAPACITORS; SIDEWALLS;

CAPACITORS; COMPOSITION; FERROELECTRIC THIN FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS DEVICES; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS;

FERROELECTRIC DEVICES;

EID: 25144505555     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2012508     Document Type: Article

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