Precursor mutual interactions in the kinetics of MOCVD of SBT films

Materials Science in Semiconductor Processing

Volumn 5, Issue 2-3, 2002, Pages 167-171

  Condorelli, G G ^a   Baeri, A ^a   Anastasi, G ^a   Fragala I L ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

Ferroelectric; Kinetics; MOCVD; Precursors; SBT

Indexed keywords

FILM GROWTH; MASS TRANSFER; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RATE CONSTANTS; STRONTIUM COMPOUNDS; SURFACE REACTIONS;

PRECURSORS;

FERROELECTRIC THIN FILMS;

EID: 0036557762     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00099-9     Document Type: Conference Paper

References (9)

1. Ramesh R., Aggarwal S., Auciello O. Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories. Mater Sci Eng R-Rep. 32:2001;191.
2. 9 thin films grown by "flash" MOCVD. Integr Ferroelectr. 14:1997;95.
3. 9 thin films. Appl Phys Lett. 68:1996;616.
4. 9 (SBT) thin film prepared by metalorganic chemical vapor deposition. Key Eng Mater. 181-182:2000;93.
5. Weiss F., Lindner J., Senateur J.P., Dubourdieu C., Galindo V., Audier M., Abrutis A., Rosina M., Frohlich K., Haessler W., Oswald S., Figueras A., Santiso J. Injection MOCVD. ferroelectric thin films and functional oxide superlattices Surf Coat Technol. 133-134:2000;191.
6. 9 ferroelectric thin films deposited at low temperatures by plasma-enhanced metalorganic chemical vapor deposition. Appl Phys Lett. 71:1997;81.
7. Baeri A., Condorelli G.G., Fragalà I.L. MOCVD kinetics of precursors for ferroelectric SBT film. Mater Res Soc Symp Proc. 655:2001;CC5.5.1.
8. 2tetraglyme (M = Ba, Sr, Ca and Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione) Inorg. Chim. Acta. 224:1994;203.
9. 2tetraglyme precursor. Chem Mater. 14:2002;4307.