Microsize defects in InGaAs/GaAs (N11)A/B multilayers quantum dot stacks

Journal of Crystal Growth

Volumn 284, Issue 1-2, 2005, Pages 47-56

  Lytvyn, P M ^a   Prokopenko, I V ^a   Strelchuk, V V ^a   Mazur, Yu I ^b   Wang, Zh M ^b   Salamo, G J ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY OF ARKANSAS   (United States)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A1. Oval defects; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; ELASTIC MODULI; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SURFACE MEASUREMENT;

NANOSTRUCTURES; OVAL DEFECTS; SEMI CONDUCTING III-V MATERIALS;

INDIUM COMPOUNDS;

EID: 25144477505     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.07.005     Document Type: Article

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