Inhomogeneities in MBE-grown GaAs/AlxGa1-xAs: A micro-Raman study

Semiconductor Science and Technology

Volumn 11, Issue 3, 1996, Pages 315-322

  Dobal, P S ^a,b   Bist, H D ^a   Mehta, S K ^c   Jain, R K ^c  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^b VSSD College Kanpur   (India)

^c SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION; DEFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM ARSENIDE; CRYSTALLINE MORPHOLOGY; INHOMOGENEITIES; MICRO RAMAN STUDY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030110463     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/3/008     Document Type: Article

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