self-organized quantum dots grown on GaAs(311)B by atomic hydrogen-assisted molecular beam epitaxy

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1613-1621

  Akahane, Kouichi ^a   Okino, Kenji ^a   Okada, Yoshitaka ^a   Kawabe, Mistuo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; PASSIVATION; PHOTOLUMINESCENCE; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

RECOMBINATION CENTERS; SELF-ORGANIZED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032121381     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00081-1     Document Type: Article

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