Reentrant mound formation in GaAs(001) homoepitaxy observed by ex situ atomic force microscopy

Physical Review Letters

Volumn 84, Issue 15, 2000, Pages 3358-3361

  Apostolopoulos, Georgios ^a,c   Herfort, Jens ^a   Däweritz, Lutz ^a   Ploog, Klaus H ^a   Luysberg, Martina ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001531885     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.3358     Document Type: Article

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