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Volumn 227-228, Issue , 2001, Pages 67-71
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Arsenic pressure dependence of hillock morphology on GaAs (n 1 1)A substrates grown using MBE
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Author keywords
A1. Crystal morphology; A1. Desorption; A1. Growth models; A1. Quasi liquid layer; A3. Molecular beam epitaxy; B1. Gallium compounds
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
DESORPTION;
MOLECULAR BEAM EPITAXY;
MORPHOLOGY;
PRESSURE EFFECTS;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
SUPERSATURATION;
HILLOCK MORPHOLOGY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0035398240
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)00634-0 Document Type: Conference Paper |
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Times cited : (4)
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References (12)
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