Growth model of oval defect structures in MBE GaAs layers

Journal of Materials Science Letters

Volumn 18, Issue 3, 1999, Pages 229-232

  Kadhim, N J ^a   Mukherjee, D ^b  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b LONDON SOUTH BANK UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; MATHEMATICAL MODELS; MICROANALYSIS; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STACKING FAULTS; SUBSTRATES;

ELECTRON PROBE MICROANALYSIS (EPMA);

SEMICONDUCTING FILMS;

EID: 0032637867     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1006617408604     Document Type: Article

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