Reflective and low-resistance Zn/Rh contacts to p-type GaN for flip-chip light-emitting diodes

Electrochemical and Solid-State Letters

Volumn 8, Issue 9, 2005, Pages

  Song, June O ^a   Hong, Woong Ki ^a   Hong, Hyun Gi ^a   Kim, Kyoung Kook ^b   Lee, Takhee ^a   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; FABRICATION; FLIP CHIP DEVICES; GALLIUM NITRIDE; LIGHT EMITTING DIODES; RHODIUM; ZINC;

CONTACT LAYERS; CONTACT RESISTIVITY; NONLINEAR BEHAVIOR;

OHMIC CONTACTS;

EID: 25144472715     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1960137     Document Type: Article

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