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Volumn 109, Issue 34, 2005, Pages 16544-16553

Boundary layer chemistry probed by in situ infrared spectroscopy during SiO 2 deposition at atmospheric pressure from tetraethylorthosilicate and ozone

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD); ETHOXYSILANOL; ORGANIC PRODUCTS; TETRAETHYLORTHOSILICATE (TEOS);

EID: 24744454694     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0518658     Document Type: Article
Times cited : (4)

References (48)
  • 5
    • 84861253521 scopus 로고    scopus 로고
    • 2 film conformality in atmospheric pressure chemical vapor deposition
    • Patent W09836106; US Patent 5,855,957
    • 2 Film Conformality in Atmospheric Pressure Chemical Vapor Deposition. PCT Int. Appl. 1998 Patent W09836106; US Patent 5,855,957.
    • (1998) PCT Int. Appl.
    • Yuan, Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.