Conversion of Tetraethoxysilane (TEOS) to Silica Film-Forming Precursors in Atomic Oxygen-Induced Chemical Vapor Deposition

Chemical Vapor Deposition

Volumn 2, Issue 6, 1996, Pages 285-291

  Wróbel, Aleksander M ^a   Walkiewicz Pietrzykowska, Agnieszka ^a   Stasiak, Marek ^a   Kulpiński, Józef ^b  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b UNIVERSITY OF LODZ   (Poland)

Author keywords

Atomic oxygen; Diethoxysilanone precursor; Oligomeric products; Silica film; Tetraethoxysilane source compound

Indexed keywords

FILM GROWTH; GAS CHROMATOGRAPHY; MASS SPECTROMETRY; MOLECULAR STRUCTURE; OLIGOMERS; OXYGEN; SILANES; SILICA;

GAS PHASE REACTION; OXYGEN INDUCED CHEMICAL VAPOR DEPOSITION; SILOXANE OLIGOMERS; TETRAETHOXYSILANE;

CHEMICAL VAPOR DEPOSITION;

EID: 0030283696     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.19960020613     Document Type: Article

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