A model of clustering of phosphorus atoms in silicon

Materials Science and Engineering: B

Volumn 123, Issue 2, 2005, Pages 176-180

  Velichko, O I ^a   Dobrushkin, V A ^b   Pakula, L ^b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b University of Rhode Island   (United States)

Author keywords

Clusters; Diffusion; Doping effects; Phosphorus; Silicon

Indexed keywords

CARRIER CONCENTRATION; DATA ACQUISITION; DIFFUSION; DOPING (ADDITIVES); MATHEMATICAL MODELS; SILICON;

CLUSTERS; DOPING EFFECTS; IMPURITY ATOMS;

PHOSPHORUS;

EID: 24644520584     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.06.014     Document Type: Article

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