Simulation of phosphorus diffusion profiles with different phosphorus surface concentration at the same diffusion temperature in silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 9, 2002, Pages 5493-5502

  Yoshida, Masayuki ^a,b   Tanaka, Shuji ^a,b  

^a Yoshida Semiconductor Laboratory   (Japan)

^b FUKUOKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Control of excess self interstitial; Controlling process of P diffusion; Decrease in quasi self interstitial formation energy; Diffusion coefficient of negatively charged P V pair; Effective P diffusion coefficient; Pair diffusion model

Indexed keywords

COMPUTER SIMULATION; PHOSPHORUS; POTENTIAL ENERGY; SURFACE PROPERTIES;

PAIR DIFFUSION MODELS;

DIFFUSION;

EID: 0036759519     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5493     Document Type: Article

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