Applicability of phosphorus and boron diffusion parameters extracted from predeposition to drive-in diffusion for bulk silicon and silicon-on-insulator

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1503-1510

  Arai, Eisuke ^a   Iida, Daisuke ^a   Asai, Hiroshi ^a   Ieki, Yasushi ^a   Uchida, Hideo ^a   Ichimura, Masaya ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Boron; Diffusion; Drive in; Phosphorus; Predeposition; Silicon; Silicon on insulator; Simulation; SOI; Solid solubility

Indexed keywords

BORON; COMPOSITION EFFECTS; COMPUTER SIMULATION; DEPOSITION; DIFFUSION; EXTRACTION; PHOSPHORUS; SOLUBILITY; SURFACE PROPERTIES; THERMAL EFFECTS;

DRIVE-IN DIFFUSION; PREDEPOSITION; SOLID SOLUBILITY; SURFACE CONCENTRATION;

SEMICONDUCTING SILICON;

EID: 0038608220     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1503     Document Type: Article

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