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Journal of Crystal Growth

Volumn 283, Issue 3-4, 2005, Pages 431-437

Effects of in doping on the properties of CdZnTe single crystals

(6) Yang, Ge a Jie, Wanqi a Li, Qiang a Wang, Tao a Li, Guoqiang a Hua, Hui a

a NORTHWESTERN POLYTECHNICAL UNIVERSITY (China)

Author keywords

A1. Doping; A1. Impurities; A1. Point defects; B1. Semiconducting II VI materials

Indexed keywords

ELECTRIC POTENTIAL; IMPURITIES; INDIUM; INGOTS; LEAKAGE CURRENTS; PHOTOLUMINESCENCE; POINT DEFECTS; REDUCTION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

CDZNTE INGOTS; DOPING; MODIFIED BRIDGMAN (MB) METHOD; SEMICONDUCTING II-IV MATERIALS;

SINGLE CRYSTALS;

EID: 24644501772 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.06.035 Document Type: Article

Times cited : (58)

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