Acceptor defects and annealing behavior in indium doped Cd1-xZnxTe (x > 0.7)

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 388-391

  Suzuki, K ^a   Inagaki, K ^a   Seto, S ^b   Tsubono, I ^a   Kimura, N ^a   Sawada, T ^a   Imai, K ^a  

^a HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

^b ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALS; ELECTRIC CONDUCTIVITY; INDIUM; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SPECTROSCOPY; TERNARY SYSTEMS; X RAY DIFFRACTION;

ACCEPTOR DEFECTS; ADMITTANCE SPECTROSCOPY; INDIUM DOPED CADMIUM ZINC TELLURIDE; ZINC CONCENTRATION;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030562439     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00687-7     Document Type: Article

References (6)

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5. S. Seto, PhD Thesis Hokkaido University (1993).
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