메뉴 건너뛰기




Volumn 265, Issue 1-2, 2004, Pages 159-164

Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties

Author keywords

A1. Defects; A1. Doping; A1. Segregation; A2. Bridgman technique; B2. Semiconducting II VI Materials

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN BOUNDARIES; INDIUM; INDUCTIVELY COUPLED PLASMA; INFRARED RADIATION; INGOTS; MASS SPECTROMETRY; PHOTOLUMINESCENCE; PHOTONS; SEGREGATION (METALLOGRAPHY);

EID: 1842422867     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.079     Document Type: Article
Times cited : (17)

References (15)
  • 7
    • 0003568126 scopus 로고
    • Northern Holland Press Inc., Holland
    • T.S. Moss, Handbook on Semiconductors, Northern Holland Press Inc., Holland, 1980, p. 301.
    • (1980) Handbook on Semiconductors , pp. 301
    • Moss, T.S.1
  • 9
    • 0001347491 scopus 로고
    • Cadmium telluride
    • R.K. Willardson, Beer A.C. New York: Academic Press
    • Zanio K. Cadmium telluride. Willardson R.K., Beer A.C. Semiconductors and Semimetals. Vol. 13:1978;246 Academic Press, New York.
    • (1978) Semiconductors and Semimetals , vol.13 , pp. 246
    • Zanio, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.