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Volumn 265, Issue 1-2, 2004, Pages 159-164
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Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties
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Author keywords
A1. Defects; A1. Doping; A1. Segregation; A2. Bridgman technique; B2. Semiconducting II VI Materials
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
CRYSTAL STRUCTURE;
DOPING (ADDITIVES);
ELECTRIC POTENTIAL;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
GRAIN BOUNDARIES;
INDIUM;
INDUCTIVELY COUPLED PLASMA;
INFRARED RADIATION;
INGOTS;
MASS SPECTROMETRY;
PHOTOLUMINESCENCE;
PHOTONS;
SEGREGATION (METALLOGRAPHY);
BRIDGMAN TECHNIQUES;
ELECTRONIC PROBE MICROSCOPY (EPM);
SEMICONDUCTING II-VI MATERIALS;
CADMIUM COMPOUNDS;
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EID: 1842422867
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2003.12.079 Document Type: Article |
Times cited : (17)
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References (15)
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