Infrared absorption behavior in CdZnTe substrates

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 611-618

  Sen, S ^a   Rhiger, D R ^a   Curtis, C R ^a   Kalisher, M H ^a   Hettich, H L ^a   Currie, M C ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

Absorption; Annealing; CdZnTe; IR transmission; Vacancies

Indexed keywords

ANNEALING; BAND STRUCTURE; ELECTRON TRANSITIONS; LIGHT ABSORPTION; LIGHT SCATTERING; LIGHT TRANSMISSION; LIQUID PHASE EPITAXY; MASS SPECTROMETRY; PHONONS; PRECIPITATION (CHEMICAL); STOICHIOMETRY; SUBSTRATES;

CADMIUM ZINC TELLURIDE; GLOW DISCHARGE MASS SPECTROMETRY; INFRARED ABSORPTION BEHAVIOUR; INTER-VALENCE BAND TRANSITION; PRECIPITATES;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0035360098     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02665843     Document Type: Article

References (27)