CD metrology for the 45nm and 32nm nodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 183-190

  Rice, Bryan J ^a   Cao, Heidi ^a   Chaudhuri, Ovijut ^b   Grumski, Michael ^a   Hartenek, Bruce ^b   Liddle, Alex ^b   Olynick, Deirdre ^b   Roberts, Jeanette ^a  

^a INTEL CORPORATION   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

AFM; CD metrology; CD SEM; Dual beam; HV SEM; Scatterometry

Indexed keywords

CD METROLOGY; CD SEM; DUAL BEAMS; HV SEM; SCATTEROMETRY;

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; LABORATORIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; X RAY OPTICS;

MEASUREMENT THEORY;

EID: 4344562122     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536071     Document Type: Conference Paper

References (2)

1. D. Joy, private communication, April 23, 2002.
2. B. J. Rice et al, Prospects for using Primary Electron-Based CD Metrology, Proceeding of SPIE 2004, Metrology XVIII.