Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown SiO2 layers by low-energy ion implantation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 4, 1999, Pages 1317-1322

  Nakajima, Anri ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 24644442921     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

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