InAs/AlGaSb piezoresistive cantilever for sub-angstrom scale displacement detection

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 B, 2004, Pages

  Houlet, Lionel F ^a   Yamaguchi, Hiroshi ^a   Miyashita, Sen ^b   Hirayama, Yoshiro ^a,c  

^a NTT Basic Research Laboratories   (Japan)

^b NTT Advance Technology Corporation   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

AFM; Cantilever; InAs AlGaSb; Piezoresistivity; Subangstrom

Indexed keywords

ATOMIC FORCE MICROSCOPY; COULOMB BLOCKADE; CRYSTALLOGRAPHY; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; FINITE ELEMENT METHOD; MOLECULAR BEAM EPITAXY; NATURAL FREQUENCIES; OPTICAL RESOLVING POWER; PIEZOELECTRIC DEVICES; SEMICONDUCTOR QUANTUM DOTS; SPECTRUM ANALYZERS;

INAS/ALGASB; PIEZORESISTIVITY; STRAIN SENSITIVITY; SUBANGSTROM;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2442719421     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l424     Document Type: Article

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