Use of neural network to characterize a low pressure temperature effect on refractive property of silicon nitride film deposited by PECVD

IEEE Transactions on Plasma Science

Volumn 32, Issue 1 I, 2004, Pages 84-89

  Kim, Byungwhan ^a   Hong, Wan Shick ^a  

^a Sejong University   (South Korea)

Author keywords

Modeling; Neural network; Plasma enhanced chemical vapor deposition (PECVD); Silicon nitride (SiN) film

Indexed keywords

NEURAL NETWORKS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; THERMAL EFFECTS;

MODEL PREDICTION ACCURACY; PREDICTIVE MODEL;

SILICON NITRIDE;

EID: 2442682980     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2004.823899     Document Type: Article

References (16)

1. P. Temple-Boyer, L. Jalabert, L. Masarotto, and J. R. Morante, "Properties of nitrogen doped silicon films deposited by low pressure chemical vapor deposition from silane and ammonia," J. Vac. Sci. Technol. A, vol. 18, no. 5, pp. 2389-2393, 2000.
2. J. Bierner, M. Jacob, and H. Schonherr, "Characterization of step coverage change in ultraviolet-transparent plasma enhanced chemical vapor deposition silicon nitride film," J. Vac. Sci. Technol. A, vol. 18, no. 6, pp. 2843-2846, 2000.
3. M. Orfert and K. Richter, "Plasma enhanced chemical vapor deposition of SiN-films for passivation of three-dimensional substrates," Surf. Coat. Technol., vol. 116-119, pp. 622-628, 1999.
4. 2 plasma chemical vapor deposition of SiNx at very high rates," Jpn. J. Appl. Phys., vol. 37, pp. 1996-2001, 1998.
5. H. Gleskova, S. Wagner, V. Gas parik, and P. Kovac, "Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates," Appl. Surf. Sci., vol. 175-176, pp. 12-16, 2001.
6. 4 by excimer lamp-CVD," Thin Solid Films, vol. 317, pp. 112-115, 1998.
7. Y. B. Park and S. W. Rhee, "Bulk and interface properties of low-temperature silicon nitride films deposited by remote plasma enhanced chemical vapor deposition," J. Mater. Sci.: Mater. Elec., vol. 12, pp. 515-522, 2001.
8. S. S. Han, "Modeling and optimization of plasma-enhanced chemical vapor deposition using neural networks and genetic algorithms," Ph.D. dissertation, Georgia Inst. Technol., Atlanta, GA, 1996.
9. 2 plasma using neural network," IEEE Trans. Plasma Sci., vol. 31, pp. 317-323, June 2003.
10. B. Kim and G. Park, "Modeling plasma equipment using neural networks," IEEE Trans. Plasma Sci., vol. 29, pp. 8-12, Feb. 2001.
11. B. Kim and S. Park, "Characterization of inductively coupled plasma using neural networks," IEEE Trans. Plasma Sci., vol. 30, pp. 698-705, Apr. 2002.
12. B. Kim and J. H. Park, "Qualitative fuzzy logic model of plasma etch process," IEEE Trans. Plasma Sci., vol. 30, pp. 673-678, Apr. 2002.
13. B. Kim and K. Kwon, "Qualitative modeling of silica plasma etching using neural network," J. Appl. Phys., vol. 93, no. 1, pp. 76-82, 2003.
14. D. E. Rummelhart and J. L. McClelland, Parallel Distributed Processing. Cambridge, MA: MIT Press, 1986.
15. D. C. Montgomery, Design and Analysis of Experiments, Singapore: Wiley, 1991.
16. B. Kim and S. Park, "An optimal neural network plasma model: A case study," Chemom. Intell. Lab. Syst., vol. 56, pp. 39-50, 2001.