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Volumn 2, Issue 2, 2004, Pages 21-27

Silicon single-electron devices

Author keywords

[No Author keywords available]

Indexed keywords

PATTERN-DEPENDENT OXIDATION (PADOX); POWER CONSUMPTION; SINGLE-ELECTRON DEVICES (SED); SINGLE-ELECTRON TRANSISTORS (SET);

EID: 2442623722     PISSN: 13483447     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (6)

References (21)
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  • 2
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  • 3
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    • Single-electron device - An ultimate device that operates on just a single electron
    • Y. Takahashi, "Single-electron Device - An Ultimate Device That Operates on Just a Single Electron," NTT Review, Vol. 12, No. 1, pp. 12-16, 2000.
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    • Takahashi, Y.1
  • 4
    • 2442516866 scopus 로고    scopus 로고
    • Si single-electron device with integrated Si islands
    • A. Fujiwara, Y. Takahashi, K. Yamazaki, and K. Murase, "Si single-electron device with integrated Si islands," NTT Review, Vol. 10, No. 6, pp. 114-118, 1998.
    • (1998) NTT Review , vol.10 , Issue.6 , pp. 114-118
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  • 5
    • 0035519331 scopus 로고    scopus 로고
    • Si single-electron CCD
    • A. Fujiwara and Y. Takahashi, "Si single-electron CCD," NTT Review, Vol. 13, No. 6, pp. 56-60, 2001.
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    • Fujiwara, A.1    Takahashi, Y.2
  • 6
    • 0033116184 scopus 로고    scopus 로고
    • Single-electron devices and their applications
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    • (1999) Proceedings of IEEE , vol.87 , pp. 606-632
    • Likharev, K.K.1
  • 12
    • 0033690681 scopus 로고    scopus 로고
    • Designing of silicon effective quanturn dots by using the oxidation-induced strain: A theoretical approach
    • K. Shiraishi, M. Nagase, S. Horiguchi, H. Kageshima, M. Uematsu, Y. Takahashi, and K. Murase, "Designing of silicon effective quanturn dots by using the oxidation-induced strain: a theoretical approach," Physica E, Vol. 7, pp. 337-341, 2000.
    • (2000) Physica E , vol.7 , pp. 337-341
    • Shiraishi, K.1    Nagase, M.2    Horiguchi, S.3    Kageshima, H.4    Uematsu, M.5    Takahashi, Y.6    Murase, K.7
  • 13
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    • Mechanism of potential profile formation of silicon single-electron transistors fabricated using pattern-dependent oxidation
    • S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, and K. Murase, "Mechanism of potential profile formation of silicon single-electron transistors fabricated using pattern-dependent oxidation," Japanese Journal of Applied Physics, Vol. 40, pp. L29-L32, 2001.
    • (2001) Japanese Journal of Applied Physics , vol.40
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  • 14
    • 2342580803 scopus 로고    scopus 로고
    • Quantum information technology based on single electron dynamics
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  • 15
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    • (2001) Applied Physics Letters , vol.79 , pp. 3188-3190
    • Zimmerman, N.M.1    Huber, W.H.2    Fujiwara, A.3    Takahashi, Y.4
  • 18
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    • Binary adders of multigate single-electron transistors: Specific design using pass-transistor logic
    • Y. Ono, H. Inokawa, and Y. Takahashi, "Binary Adders of Multigate Single-Electron Transistors: Specific Design Using Pass-Transistor Logic," IEEE Transaction on Nanotechnology, Vol. 1, pp. 63-67, 2002.
    • (2002) IEEE Transaction on Nanotechnology , vol.1 , pp. 63-67
    • Ono, Y.1    Inokawa, H.2    Takahashi, Y.3
  • 19
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    • A multipeak negative differential resistance device by combining single-electron and metal-oxide-semiconductor transistors
    • H. Inokawa, A. Fujiwara, and Y. Takahashi, "A multipeak negative differential resistance device by combining single-electron and metal-oxide-semiconductor transistors," Applied Physics Letters, Vol. 79, pp. 3618-3620, 2001.
    • (2001) Applied Physics Letters , vol.79 , pp. 3618-3620
    • Inokawa, H.1    Fujiwara, A.2    Takahashi, Y.3
  • 20
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  • 21
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    • Multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors
    • H. Inokawa, A. Fujiwara, and Y. Takahashi, "Multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors," IEEE Transaction of Electron Devices, Vol. 50, pp. 462-470, 2003.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.