An endurance evaluation method for flash EEPROM

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 720-725

  Zous, Nian Kai ^a   Chen, Yin Jen ^a   Chin, Chi Yuan ^a   Tsai, Wen Jer ^a,b   Lu, Tao Cheng ^c   Chen, Ming Shiang ^a   Lu, Wen Pin ^a   Wang, Tahui ^a,b   Pan, Samuel C ^a   Lu, Chih Yuan ^a,c  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Ardentec Corporation   (Taiwan)

Author keywords

Dynamic stress; Evaluation method; Flash EEPROM; Tunnel oxide

Indexed keywords

DEGRADATION; ELECTRON TRAPS; ELECTRON TUNNELING; OXIDES; STRESSES;

DYNAMIC STRESS FIELD; ENDURANCE EVALUATION; FLASH CELL CYCLING; FOWLER NORDHEIM TUNNELING; LINEAR CORRELATION; OXIDE TRAP GENERATION;

PROM;

EID: 2442596119     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.826871     Document Type: Article

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