Effects of fowler nordheim tunneling stress vs. Channel hot electron stress on data retention characteristics of floating gate non-volatile memories

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 439-440

  Suhail, M ^a   Harp, T ^a   Bridwell, J ^a   Kuhn, P J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; HOT CARRIERS; LEAKAGE CURRENTS; RELIABILITY; STRESS ANALYSIS;

CHANNEL HOT ELECTRONS (CHE);

DATA STORAGE EQUIPMENT;

EID: 0036081974     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996685     Document Type: Article

References (7)

1. A reliability methodology for low temperature data retention in floating gate non volatile memories
2. Excess currents induced by hot-hole injection and F-N stress in thin SiO/Sub2 films [flash memories]
3. Non-uniform current flow through thin oxide after F-N current stress
4. Investigation for degradation of the retention characteristics due to oxide traps induced by hole injection
5. Stress induced leakage current limiting to scale down EEPROM tunnel oxide
6. Reliability performance of ETOX based flash memories
7. A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs