Investigation of the time dependence of current degradation in MOS devices

Volumn , Issue , 1989, Pages 103-109

  Rakkhit, R ^a   Peckerar, M C ^a   Yao, C T ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES--PERTURBATION TECHNIQUES;

CURRENT DEGRADATION; INTERFACE GENERATED TRAPS; OXIDE TRAPPED CHARGES; TIME DEPENDENT TRANSPORT EQUATIONS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024862634     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/irps.1989.363370     Document Type: Conference Paper

References (15)