Flash EPROM endurance simulation using physics-based models

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 295-298

  Peng, Jack Z Z ^a   Haddad, Sameer ^a   Fang, Hao ^a   Chang, Chi ^a   Longcor, Steve ^a   Ho, Bernard ^a   Sun, Yu ^a   Liu, David ^a   Tang, Yuan ^a   Hsu, James ^a   Luan, Shengwen ^a   Lien, Jih ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT CONTROL; ELECTRON TUNNELING; HOT CARRIERS; INTERFACES (COMPUTER); MATHEMATICAL MODELS; PARTICLE BEAM INJECTION; ROM;

FIELD DEPENDENT OXIDE CHARGE GENERATION; FLASH EPROM DEVICE; FOWLER-NORDHEIM TUNNELING; GATE CURRENT REDUCTION; HOT CARRIER INJECTION; INTERFACE CHARGE GENERATION MODEL;

NONVOLATILE STORAGE;

EID: 0028737004     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)